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Artigo de periodico
Analytical physics-based compact current–voltage model for 2D-2D resonant tunneling diodes (2022)
Celino, Daniel Ricardo ; Ragi, Regiane; Romero, Murilo Araujo
Source: IEEE Transactions on Nanotechnology. Unidade: EESC
Subjects: POTENCIAL ELÉTRICO, ENGENHARIA ELÉTRICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CELINO, Daniel Ricardo e RAGI, Regiane e ROMERO, Murilo Araujo. Analytical physics-based compact current–voltage model for 2D-2D resonant tunneling diodes. IEEE Transactions on Nanotechnology, v. 21, p. 752-762, 2022Tradução . . Disponível em: https://doi.org/10.1109/TNANO.2022.3223019. Acesso em: 02 maio 2024.
APA
Celino, D. R., Ragi, R., & Romero, M. A. (2022). Analytical physics-based compact current–voltage model for 2D-2D resonant tunneling diodes. IEEE Transactions on Nanotechnology, 21, 752-762. doi:10.1109/TNANO.2022.3223019
NLM
Celino DR, Ragi R, Romero MA. Analytical physics-based compact current–voltage model for 2D-2D resonant tunneling diodes [Internet]. IEEE Transactions on Nanotechnology. 2022 ; 21 752-762.[citado 2024 maio 02 ] Available from: https://doi.org/10.1109/TNANO.2022.3223019
Vancouver
Celino DR, Ragi R, Romero MA. Analytical physics-based compact current–voltage model for 2D-2D resonant tunneling diodes [Internet]. IEEE Transactions on Nanotechnology. 2022 ; 21 752-762.[citado 2024 maio 02 ] Available from: https://doi.org/10.1109/TNANO.2022.3223019
Artigo de periodico
Fully analytical compact model for the I–V characteristics of large radius junctionless nanowire FETs (2019)
Ragi, Regiane; Romero, Murilo Araújo
Source: IEEE Transactions on Nanotechnology. Unidade: EESC
Subjects: TRANSISTORES, ENGENHARIA ELÉTRICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RAGI, Regiane e ROMERO, Murilo Araújo. Fully analytical compact model for the I–V characteristics of large radius junctionless nanowire FETs. IEEE Transactions on Nanotechnology, v. 18, n. 1, p. 762-769, 2019Tradução . . Disponível em: https://doi.org/10.1109/TNANO.2019.2926041. Acesso em: 02 maio 2024.
APA
Ragi, R., & Romero, M. A. (2019). Fully analytical compact model for the I–V characteristics of large radius junctionless nanowire FETs. IEEE Transactions on Nanotechnology, 18( 1), 762-769. doi:10.1109/TNANO.2019.2926041
NLM
Ragi R, Romero MA. Fully analytical compact model for the I–V characteristics of large radius junctionless nanowire FETs [Internet]. IEEE Transactions on Nanotechnology. 2019 ; 18( 1): 762-769.[citado 2024 maio 02 ] Available from: https://doi.org/10.1109/TNANO.2019.2926041
Vancouver
Ragi R, Romero MA. Fully analytical compact model for the I–V characteristics of large radius junctionless nanowire FETs [Internet]. IEEE Transactions on Nanotechnology. 2019 ; 18( 1): 762-769.[citado 2024 maio 02 ] Available from: https://doi.org/10.1109/TNANO.2019.2926041
Artigo de periodico
An explicit quantum-mechanical compact model for the I-V characteristics of cylindrical nanowire MOSFETs (2016)
Ragi, Regiane; Nobrega, Rafael Vinicius Tayette da; Duarte, Ulysses Rondina; Romero, Murilo Araújo
Source: IEEE Transactions on Nanotechnology. Unidade: EESC
Subjects: MECÂNICA QUÂNTICA, MODELOS MATEMÁTICOS, MODELOS ANALÍTICOS, SEMICONDUTORES, NANOELETRÔNICA, TRANSISTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RAGI, Regiane et al. An explicit quantum-mechanical compact model for the I-V characteristics of cylindrical nanowire MOSFETs. IEEE Transactions on Nanotechnology, v. 15, n. 4, p. 627-634, 2016Tradução . . Disponível em: https://doi.org/10.1109/TNANO.2016.2567323. Acesso em: 02 maio 2024.
APA
Ragi, R., Nobrega, R. V. T. da, Duarte, U. R., & Romero, M. A. (2016). An explicit quantum-mechanical compact model for the I-V characteristics of cylindrical nanowire MOSFETs. IEEE Transactions on Nanotechnology, 15( 4), 627-634. doi:10.1109/TNANO.2016.2567323
NLM
Ragi R, Nobrega RVT da, Duarte UR, Romero MA. An explicit quantum-mechanical compact model for the I-V characteristics of cylindrical nanowire MOSFETs [Internet]. IEEE Transactions on Nanotechnology. 2016 ; 15( 4): 627-634.[citado 2024 maio 02 ] Available from: https://doi.org/10.1109/TNANO.2016.2567323
Vancouver
Ragi R, Nobrega RVT da, Duarte UR, Romero MA. An explicit quantum-mechanical compact model for the I-V characteristics of cylindrical nanowire MOSFETs [Internet]. IEEE Transactions on Nanotechnology. 2016 ; 15( 4): 627-634.[citado 2024 maio 02 ] Available from: https://doi.org/10.1109/TNANO.2016.2567323
Artigo de periodico
Tuning low-spin to high-spin 'MN' pairs in 2-D 'ZN''O' by injecting holes (2012)
Miwa, R H; Schmidt, T M; Fazzio, A
Source: IEEE Transactions on Nanotechnology. Unidade: IF
Assunto: FERROMAGNETISMO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MIWA, R H e SCHMIDT, T M e FAZZIO, A. Tuning low-spin to high-spin 'MN' pairs in 2-D 'ZN''O' by injecting holes. IEEE Transactions on Nanotechnology, v. 11, n. 1, p. 71-76, 2012Tradução . . Disponível em: https://doi.org/10.1109/TNANO.2011.2150760. Acesso em: 02 maio 2024.
APA
Miwa, R. H., Schmidt, T. M., & Fazzio, A. (2012). Tuning low-spin to high-spin 'MN' pairs in 2-D 'ZN''O' by injecting holes. IEEE Transactions on Nanotechnology, 11( 1), 71-76. doi:10.1109/TNANO.2011.2150760
NLM
Miwa RH, Schmidt TM, Fazzio A. Tuning low-spin to high-spin 'MN' pairs in 2-D 'ZN''O' by injecting holes [Internet]. IEEE Transactions on Nanotechnology. 2012 ;11( 1): 71-76.[citado 2024 maio 02 ] Available from: https://doi.org/10.1109/TNANO.2011.2150760
Vancouver
Miwa RH, Schmidt TM, Fazzio A. Tuning low-spin to high-spin 'MN' pairs in 2-D 'ZN''O' by injecting holes [Internet]. IEEE Transactions on Nanotechnology. 2012 ;11( 1): 71-76.[citado 2024 maio 02 ] Available from: https://doi.org/10.1109/TNANO.2011.2150760

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